DocumentCode :
1454190
Title :
Use of high-intensity electron beam to form nanohole, induce bending and fabricate nanocontact on a ZnO nanowire
Author :
Ahmad, Ishtiaq ; Chang Fu Dee ; Husnain, G. ; Rafique, Hafiz Muhammad ; Yan Long ; Naseem, Shahzad
Author_Institution :
Nat. Center for Phys., Quaid-i-Azam Univ., Islamabad, Pakistan
Volume :
7
Issue :
2
fYear :
2012
Firstpage :
122
Lastpage :
124
Abstract :
This Letter presents the experiment of using a high-intensity electron beam to form nanohole, induce bending and fabricate nanocontact on a ZnO nanowire (NW). This study reveals that a nanohole with diameter of not more than 10 nm could easily been created in seconds. A lateral half-cutting on the ZnO NW could induce bending. Nanocontact of the NW could also been achieved by performing a control quasi-sectioning of NW. The electron beam performs rapid localised surface melting and vaporisation in ZnO NW. These processes could possibly be implemented for the fabrication of NW-based devices for the applications of single electron devices and also NW cutting, alignment and carving.
Keywords :
II-VI semiconductors; bending; electron beam effects; melting; nanocontacts; nanofabrication; nanowires; semiconductor growth; vaporisation; wide band gap semiconductors; zinc compounds; ZnO; bending; high-intensity electron beam; lateral half-cutting; nanocontact; nanohole; nanowire; rapid localised surface melting; vaporisation;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2011.0701
Filename :
6156033
Link To Document :
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