• DocumentCode
    1454197
  • Title

    Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits

  • Author

    Kim, Kwang Ho ; Kim, Yong-Hoon ; Kim, Hyun Jae ; Han, Jeong-In ; Park, Sung Kyu

  • Author_Institution
    Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
  • Volume
    32
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    524
  • Lastpage
    526
  • Abstract
    Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility >;2.5 ± 0.29 cm2/V · s (W/L = 100/10 μm) and subthreshold slope <;0.4 ± 0.122 V/dec . The ZTO seven-stage ring oscillators have shown an oscillation frequency of 800 kHz with a supply voltage VDD = 60 V, corresponding to a propagation delay of <; 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of >; 50 V for several hours.
  • Keywords
    oscillators; thin film circuits; thin film transistors; zinc compounds; ZTO seven-stage ring oscillator; ZnSnO2; frequency 800 kHz; oscillation frequency; propagation delay; saturation mobility; semiconductor channel area; source-drain bias voltage; stable solution-process; subthreshold slope; transparent oxide thin-film transistor circuits; voltage 60 V; Inverters; Logic gates; Passivation; Ring oscillators; Thin film transistors; Ring oscillator; solution process; thin-film transistor (TFT); zinc-tin-oxide (ZTO);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2107494
  • Filename
    5716661