Title :
The effect of dislocations on the capacitance vs. bias voltage characteristic of mos capppacitors
Author :
Goklaney, S.M. ; Porter, W.A.
Abstract :
MOS capacitors have been fabricated on silicon material that has been selectively damaged. Varying dislocation densities have been produced and the resulting effects on carrier mobility has been related to the C-V characteristics of the MOS capacitors. Critical dislocation densities that change the C-V characteristics from high frequency to low frequency at 1 KHz are presented and discussed.
Keywords :
capacitors; metal-insulator-semiconductor devices; MOS capacitors; capacitance versus bias voltage characteristics; effect of dislocations;
Journal_Title :
India, IEE-IERE Proceedings -
DOI :
10.1049/iipi.1974.0052
