Strain-compensated 1.3-μm AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers

Author

Jen-Wei Pan ; Ming-Hong Chen ; Jen-Inn Chyi ; Tien-Tsorng Shih

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

11

Issue

1

fYear

1999

Firstpage

9

Lastpage

11

Abstract

Strain-compensated 1.3-μm AlGaInAs graded-index separate confinement heterostructure (GRINSCH) lasers with multiquantum barrier (MQB) at both the nand p-cladding layers are comprehensively studied and compared with the conventional GRINSCH lasers. It is found that the lasers with MQBs exhibit lower threshold current, higher maximum output power and better temperature characteristics because of the enhanced barrier height for carrier leakage. The characteristic temperature is improved as much as 10 K and the vertical far-field angle is also reduced from 38/spl deg/ to 32/spl deg/ as compared to the conventional counterpart.

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gradient index optics; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 mum; 1.3-/spl mu/m AlGaInAs quantum-well lasers; AlGaInAs; GRINSCH lasers; carrier leakage; characteristic temperature; cladding layers; enhanced barrier height; higher maximum output power; lower threshold current; multiquantum barrier; multiquantum barriers; n-cladding layers; p-cladding layers; strain-compensated; temperature characteristics; vertical far-field angle; Laser modes; Optical losses; Optical sensors; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.736373

Filename

736373