Title :
An implanted-emitter 4H-SiC bipolar transistor with high current gain
Author :
Tang, Yi ; Fedison, Jefferey B. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl sim/40, the highest current gain reported for BJT in any polytype of SiC has been experimentally demonstrated in 4H-SiC. The forward drop was /spl sim/1 V at forward current density of 50 A/cm/sup 2/. The current gain decreases hence specific on-resistance increases with increasing temperature. The negative temperature coefficient of /spl beta/ makes the device attractive for paralleling and for preventing thermal runaways.
Keywords :
bipolar transistors; ion implantation; silicon compounds; wide band gap semiconductors; 4H-SiC bipolar transistor; SiC; current gain; epi-base implanted-emitter n-p-n BJT; forward current density; forward voltage drop; specific on-resistance; temperature coefficient; Annealing; Bipolar transistors; Current control; Current density; Doping; Implants; MOSFETs; Power semiconductor devices; Silicon carbide; Temperature;
Journal_Title :
Electron Device Letters, IEEE
