3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

Author

Sei-Hyung Ryu ; Agarwal, A.K. ; Singh, R. ; Palmour, J.W.

Author_Institution

Cree Inc., Durham, NC, USA

Volume

22

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

127

Lastpage

129

Abstract

A 2-mm×2-mm, 4H-SiC, asymmetrical npnp gate turn-off (GTO) thyristor with a blocking voltage of 3100 V and a forward current of 12 A is reported. This is the highest reported power handling capability of 37 kW for a single device in SiC. The 5-epilayer structure utilized a blocking layer that was 50 μm thick, p-type, doped at about 7-9×10/sup 14/ cm/sup -3/. The devices were terminated with a single zone junction termination extension (JTE) region formed by ion-implantation of nitrogen at 650/spl deg/C. The device was able to reliably turn-on and turn-off 20 A (500 A/cm²) of anode current with a turn-on gain (I/sub K//I/sub G, on/) of 20 and a turn-off gain (I/sub K//I/sub G, off/) of 3.3.

Keywords

ion implantation; semiconductor epitaxial layers; silicon compounds; thyristors; wide band gap semiconductors; 12 A; 20 A; 3100 V; 37 kW; 4H-SiC asymmetrical gate turn-off thyristor; 650 C; SiC; blocking voltage; epilayer structure; forward current; ion implantation; junction termination extension; power device; Anodes; Conducting materials; Forward contracts; Nitrogen; Photonic band gap; Silicon carbide; Temperature; Thermal conductivity; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.910618

Filename

910618