Title :
Laser Validation of a Non-Destructive Test Methodology for the Radiation Sensitivity Assessment of Power Devices
Author :
Miller, F. ; Morand, S. ; Douin, A. ; Gaillard, R. ; Carriére, T. ; Buard, N.
Author_Institution :
EADS France Innovation Works, Suresnes, France
fDate :
6/1/2011 12:00:00 AM
Abstract :
This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of destructive single event effects in power devices. Laser tests and simulations are used to demonstrate its efficiency.
Keywords :
MOSFET; insulated gate bipolar transistors; laser beam applications; nondestructive testing; power semiconductor devices; IGBT; MOSFET; destructive single event effects; laser validation; nondestructive test methodology; power device; radiation sensitivity assessment; Insulated gate bipolar transistors; Measurement by laser beam; Power MOSFET; Power lasers; Sensitivity; Burnout; IGBT; MOSFET; SEB; SEL; SET; destructive single event effects; laser; latchup; non-destructive tests; radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2098887
