Title :
The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers
Author :
Newell, T. ; Wu, X. ; Gray, A.L. ; Dorato, S. ; Lee, H. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Two and four quantum-well (QW) GaInAsSb-AlGaAsSb lasers emitting at 2 μm are reported. In comparison to previously published data, it is found that higher Al content in the QW barrier improves the internal efficiency, saturated modal gain, and characteristic temperature of the lasers. These results are attributed to an increased valence band offset that provides superior hole confinement in the GaInAsSb QW. A differential efficiency of 74% is observed at 25/spl deg/C under pulsed conditions for a 900-μm cavity length, 2-QW device, and a record characteristic temperature of 140 K is measured for a 4-QW laser.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; valence bands; 140 K; 2 mum; 25 C; 74 percent; 900 micron; Al content; GaInAsSb QW; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb lasers; QW barrier; cavity length; characteristic temperatur; differential efficiency; hole confinement; increased valence band offset; internal efficiency; pulsed conditions; quantum-well lasers; saturated modal gain; valence band offset; Capacitive sensors; Laboratories; Laser modes; Power lasers; Pulse measurements; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
