Title :
2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
Author :
Mitsuhara, M. ; Ogasawara, M. ; Oishi, M. ; Sugiura, H. ; Kasaya, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Single-mode operation beyond 2.05-μm wavelength has been achieved in InGaAs-InGaAs distributed-feedback (DFB) laser with four quantum wells. The continuous-wave output power is 10.5 mW at a drive current of 200 mA and 25/spl deg/C, The tuning range of the wavelength is between 2.051-2.056 μm with a temperature tuning rate of +0.125 nm//spl deg/C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; laser tuning; quantum well lasers; 10 mW; 10.5 mW; 2.05 mum; 2.051 to 2.056 mum; 200 mA; 25 C; InGaAs-InGaAs; InGaAs-InGaAs MQW DFB laser; InGaAs-InGaAs distributed-feedback multiquantum-well lasers; continuous-wave output power; drive current; laser tuning range; mW output power; quantum well lasers; single-mode operation; temperature tuning rate; Indium gallium arsenide; Laser modes; Laser tuning; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Spectroscopy; Surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
