DocumentCode :
1454544
Title :
GHz amplifiers go nano
Volume :
47
Issue :
4
fYear :
2011
Firstpage :
227
Lastpage :
227
Abstract :
Mass-producible carbon nanotube field effect transistors (CNTFETs) have been used for the first time to build a GHz amplifier. US-based collaborating companies RF Nano Corp. and MITEQ Ltd. developed a CNTFET-based single-stage L-band RF amplifier which demonstrates the highest performance circuit published so far for this technology.
Keywords :
MMIC amplifiers; carbon nanotubes; field effect MMIC; field effect transistors; nanotube devices; CNTFETs; GHz amplifiers; MMIC amplifiers; carbon nanotube field effect transistors; single-stage L-band RF amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.9013
Filename :
5716778
Link To Document :
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