DocumentCode
1454554
Title
0.2 μm gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft=62 GHz
Author
Shealy, J.B. ; Mishra, U.K.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
32
Issue
23
fYear
1996
fDate
11/7/1996 12:00:00 AM
Firstpage
2180
Lastpage
2181
Abstract
Recently, the authors demonstrated improved breakdown characteristics in 1 μm gate length P+-AlInAs/N-AlInAs/GaInAs JHEMTs utilising a junction to modulate the 2-DEG and regrowth of the ohmic contact regions by MOCVD. The authors present high frequency operation (ft and fmax of 62 and 105 GHz, respectively) of 0.2 μm devices with high current (500 mA/mm) and transconductance (300 mS/mm) giving improved breakdown characteristics (twoand three-terminal gate breakdown voltages of 19 and 16 V, respectively)
Keywords
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; ohmic contacts; semiconductor growth; two-dimensional electron gas; vapour phase epitaxial growth; 0.2 micron; 105 GHz; 16 V; 19 V; 2-DEG; 300 mS/mm; 62 GHz; AlInAs-AlInAs-GaInAs; III-V semiconductors; JHEMTs; MOCVD; breakdown characteristics; gate length; high frequency operation; junction-modulated HEMT; ohmic contact regions; three-terminal gate breakdown voltages; transconductance; two-terminal gate breakdown voltages;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961428
Filename
543912
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