Title :
Ferroelectric storage elements for digital computers and switching systems
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Abstract :
These ferroelectric storage devices, although still comparatively new, show great promise. They can store up to 2,500 bits of information per square inch in a surface only a few thousandths of an inch thick with pulses less than a microsecond long.
Keywords :
Barium; Capacitance; Capacitors; Crystals; Delay lines; Ferroelectric materials; Hysteresis;
Journal_Title :
Electrical Engineering
DOI :
10.1109/EE.1952.6437735
