Title :
4.2 GHz sub-harmonic low-phase-noise oscillator based on BAW resonator
Author :
Li, Meng ; Seok, Sangok ; Rolland, Nathalie ; Rolland, P.-A. ; El Aabbaoui, Hassan ; De Foucauld, Emeric ; Vincent, Pierre
Author_Institution :
IEMN, Villeneuve d´Ascq, France
Abstract :
A 4.2 GHz sub-harmonic low-phase-noise oscillator is presented. Optimisation of phase noise has been achieved by a combination of a 2 GHz bulk acoustic wave (BAW) resonator and a differential Colpitts topology circuit adopting STMicroelectronics 0.25 μm SiGe:C BiCMOS technology. The measured phase noise is -132 dBc/Hz at 100 kHz offset while the power consumption of the core oscillator is 21 mW with a figure of merit of -211 dBc/Hz. To the authors knowledge, this sub-harmonic oscillator achieves the best phase-noise level for a BAW based oscillator at 4 GHz band.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; UHF resonators; bulk acoustic wave devices; phase noise; semiconductor materials; BAW resonator; STMicroelectronics BiCMOS technology; SiGe; bulk acoustic wave resonator; differential Colpitts topology circuit; frequency 2 GHz; frequency 4.2 GHz; power 21 mW; size 0.25 mum; subharmonic low-phase noise oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3472
