DocumentCode
1454635
Title
Investigation of boundary-MOS-triggered SCR structures for on-chip ESD protection
Author
Ma, Fa-Jun ; Han, Yi ; Dong, Shuai ; Song, Bo ; Miao, Meng ; Zhu, Kun
Author_Institution
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Volume
47
Issue
4
fYear
2011
Firstpage
246
Lastpage
247
Abstract
Novel boundary-MOS-triggered SCR devices have been fabricated and investigated in 0.13 μm CMOS process for on-chip ESD protection. Compared to conventional MOS-triggered SCRs with 50 μm width, boundary-MOS-triggered SCR structures can achieve an adjustable trigger voltage as low as 3 V, a smaller turn-on resistance of 1.75 Ω, a shorter turn-on time of 4.5 ns and a higher failure current of 3.06 A, which make them superior ESD clamp devices for nanoscale CMOS ICs.
Keywords
CMOS integrated circuits; MOS-controlled thyristors; electrostatic discharge; nanoelectronics; ESD clamp device; boundary-MOS-triggered SCR device; current 3.06 A; electrostatic discharge; failure current; nanoscale CMOS IC; on-chip ESD protection; resistance 1.75 ohm; size 0.13 mum; time 4.5 ns; trigger voltage; turn-on resistance; turn-on time; voltage 3 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.3524
Filename
5716791
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