Electrical phase change of CVD-grown Ge-Sb-Te thin-film device

A prototype Ge-Sb-Te thin-film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5-1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl₄, SbCl₅, and Te precursors with reactive gas H₂ at reaction temperature 780°C and substrate temperature 250°C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterised by scanning electron microscopy and energy dispersive X-ray analysis. The CVD-grown Ge-Sb-Te thin film shows promise for phase change memory applications.