Title :
Inversion layer mobility under high normal field in nitrided-oxide MOSFETs
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
A comprehensive study on the inversion layer mobility improvement of n-channel MOSFETs with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented. The performance improvement is described from both the device physics modeling and device/circuit design points of view by using the various kinds of current drivability and mobility data over wide ranges of gate drive and Eeff. The nitridation- and reoxidation-condition dependencies of the mobility values are extensively reported. A mechanism for improvement is discussed in conjunction with the observed results of Auger electron spectroscopy, capacitance-voltage measurements, hole mobility measurements of p-channel MOSFETs, and transmission electron microscopy. The (reoxidized) nitrided oxides were fabricated fully by rapid thermal processing instead of conventional quartz-tube furnace annealing, whose major drawback is a considerable redistribution of dopant impurities
Keywords :
Auger effect; carrier mobility; high field effects; incoherent light annealing; insulated gate field effect transistors; inversion layers; semiconductor device models; surface treatment; transmission electron microscope examination of materials; Auger electron spectroscopy; Si-SiOxNy; capacitance-voltage measurements; current drivability; device physics modeling; device/circuit design; gate drive; high normal field; hole mobility; inversion layer mobility; n-channel MOSFETs; nitridation condition; p-channel MOSFETs; rapid thermal processing; reoxidation-condition dependencies; transmission electron microscopy; Capacitance measurement; Capacitance-voltage characteristics; Charge carrier processes; Circuit synthesis; Electron mobility; MOSFETs; Physics; Rapid thermal processing; Spectroscopy; Transmission electron microscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
