Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 Ω/square), and low specific contact resistivity (7.6×10)^-7Ω cm²), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio , subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm²/Vs at sheet charge density of 2×10¹² cm^-2.