DocumentCode :
1454923
Title :
Influence of as on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
Author :
Tseng, Chi-Che ; Mai, Shu-Cheng ; Lin, Wei-Hsun ; Wu, Shung-Yi ; Yu, Bang-Ying ; Chen, Shu-Han ; Lin, Shih-Yen ; Shyue, Jing-Jong ; Wu, Meng-Chyi
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
47
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
335
Lastpage :
339
Abstract :
The influence of As atoms on the morphologies of GaSb quantum dots (QDs) is investigated. Without any special treatment, GaSb quantum rings (QRs) are observed in the embedded GaSb layer even when the uncapped layer reveals QD like morphologies. With intentional As supply after the uncapped GaSb QD deposition, a QD to QR transition is observed. The phenomenon suggests that insufficient Sb atoms on the GaSb QDs would lead to the QD to QR transition as in the case of embedded GaSb layers. With extended Sb soaking time following GaSb deposition, QD structures could be well maintained for the embedded GaSb layers. A light-emitting diode operated at room temperature is fabricated based on the GaSb/GaAs QD structure. Identical peak positions in photoluminescence and electroluminescence (EL) spectra of the device show that type-II GaSb QDs are responsible for the observed EL.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; light emitting diodes; photoluminescence; semiconductor quantum dots; GaSb-GaAs; electroluminescence; light-emitting diode; photoluminescence; quantum dots; quantum rings; Atomic layer deposition; Gallium arsenide; Molecular beam epitaxial growth; Morphology; Quantum dots; Surface morphology; Surface treatment; GaSb quantum dots; light-emitting diode;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2010.2089041
Filename :
5716917
Link To Document :
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