DocumentCode
1454945
Title
Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers
Author
Yang, Zhenshan ; Tauke-Pedretti, Anna ; Vawter, G. Allen ; Chow, Weng W.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
47
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
300
Lastpage
305
Abstract
The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system.
Keywords
laser mode locking; optical modulation; semiconductor lasers; injection-locked semiconductor lasers; lock band boundary; modulation response; modulation-induced transition; unlocked operations; Cavity resonators; Frequency modulation; Laser excitation; Vertical cavity surface emitting lasers; High-speed lasers; injection-locking; semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2010.2083638
Filename
5716921
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