DocumentCode
1454995
Title
Analysis of latchup-induced photon emissions
Author
Aoki, Takahiro ; Yoshii, Akira
Author_Institution
NTT LSI Lab., Atsugi, Japan
Volume
37
Issue
9
fYear
1990
fDate
9/1/1990 12:00:00 AM
Firstpage
2080
Lastpage
2083
Abstract
Latchup-induced photon emission from CMOS devices is studied and compared with photon emission from hot carriers. Experiments revealed fundamental differences in spectral characteristics. By exploiting these differences, latchup sites are identified and depicted in high resolution. An effective method of separating photon emission patterns by passing through bandpass optical filters is described. It is shown that the photon emission mechanism from latchup is phonon-assisted electron-hole recombination
Keywords
CMOS integrated circuits; electroluminescence; electron-hole recombination; electron-phonon interactions; CMOS devices; bandpass optical filters; hot carriers; latchup sites; latchup-induced photon emissions; phonon-assisted electron-hole recombination; spectral characteristics; Image intensifiers; Infrared detectors; Monitoring; Optical filters; Optical microscopy; Optical sensors; Photonic integrated circuits; Spatial resolution; Stimulated emission; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.57172
Filename
57172
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