DocumentCode
1455051
Title
Two-dimensional avalanche simulation of collector-emitter breakdown
Author
Arnborg, Torkel
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
37
Issue
9
fYear
1990
fDate
9/1/1990 12:00:00 AM
Firstpage
2099
Lastpage
2101
Abstract
A two-dimensional (2-D) transient simulation approach with the avalanche effect included has been used to study breakdown phenomena in conventional vertical bipolar transistors of the n-p-n type. The simulated current responses to voltage ramps show the important difference in speed for the emitter-collector breakdown and collector-base breakdown. DC specified values may be too conservative
Keywords
bipolar transistors; impact ionisation; semiconductor device models; 2D avalanche simulation; collector-emitter breakdown; current responses; n-p-n vertical bipolar transistors; voltage ramps; Avalanche breakdown; Bipolar transistors; Breakdown voltage; Charge carrier processes; Doping; Electric breakdown; Epitaxial layers; Steady-state; Two dimensional displays; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.57175
Filename
57175
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