Fowler-Nordheim characteristics of electron irradiated MOS capacitors

Author

Candelori, A. ; Paccagnella, A. ; Cammarata, M. ; Ghidini, G. ; Fuochi, P.G.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2383

Lastpage

2390

Abstract

MOS capacitors with 8 nm thick oxides have been irradiated by an 8 MeV LINAC electron beam. C-V and I-V measurements have shown a positive trapped charge, higher for irradiation performed under negative gate bias, as a consequence of preferential charge recombination at the cathodic interface. No saturation of the positive trapped charge is measured up to 20 Mrad(Si). Neutral defects induced by irradiation have been studied, by performing positive and negative Fowler-Nordheim injection. The distribution of neutral defects is similar to that of trapped holes, indicating a correlation between trapped holes and neutral defects. Electrical stresses performed after irradiation have shown that the accumulation kinetics of oxide defects is similar in both unirradiated and irradiated devices

Keywords

CMOS integrated circuits; MOS capacitors; electron beam effects; electron-hole recombination; hole traps; integrated circuit measurement; integrated circuit reliability; 0 to 20 Mrad; 8 MeV; 8 nm; C-V measurements; CMOS integrated circuits; Fowler-Nordheim characteristics; I-V measurements; LINAC electron beam; accumulation kinetics; electrical stresses; electron irradiated MOS capacitors; negative gate bias; neutral defects; positive trapped charge; preferential charge recombination; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electron beams; Electron traps; Linear particle accelerator; MOS capacitors; Performance evaluation; Spontaneous emission; Stress;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736458

Filename

736458