Title :
High-current snapback characteristics of MOSFETs
Author :
Fong, Y. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
9/1/1990 12:00:00 AM
Abstract :
The high-current snapback characteristics of MOSFETs with different channel lengths and widths, gate oxide thicknesses, and substrate dopings were studied to determine their effectiveness in electrostatic discharge stress protection. Filamentary conduction was not observed for currents up to 7 mA/μm of channel width for a pulsewidth of 500 ns. MOSFETs with shorter channel lengths require lower voltages to sustain the same current, independent of gate oxide thickness. Increasing the substrate doping does not necessarily reduce the high current voltage. These trends can be explained using a simple lateral n-p-n bipolar transistor snapback model
Keywords :
electrostatic discharge; insulated gate field effect transistors; semiconductor device models; MOSFETs; channel lengths; channel width; electrostatic discharge stress protection; gate oxide thicknesses; high-current snapback characteristics; lateral n-p-n bipolar transistor snapback model; substrate dopings; Biological system modeling; Breakdown voltage; Doping; Electrostatic discharge; MOS capacitors; MOSFETs; Protection; Pulse measurements; Resistors; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
