DocumentCode :
1455161
Title :
Ultrafast all-optical spin polarization switch using quantum-well etalon
Author :
Nishikawa, Yuji ; Tackeuchi, Atsushi ; Yamaguchi, Masaomi ; Muto, Shunichi ; Wada, Osamu
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Volume :
2
Issue :
3
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
661
Lastpage :
667
Abstract :
Ultrafast all-optical switch is proposed and demonstrated using picoseconds spin-polarization relaxation in a multiple-quantum-well (MQW) etalon structure. The decay time of the conventional all-optical switching in MQW etalon is restricted by the carrier lifetime, typically in nanoseconds. Using carrier spin relaxation, the polarization change of the probe beam has been demonstrated to be switched with a pulse width of 4 ps and a contrast of 4:1 at a pump pulse energy of 50 fJ/μ 2. In the present device, the contrast is determined by the polarization rotation angle of the probe beam, and the polarization-rotation angle has been shown to be proportional to the total well thickness. It is predicted that a contrast can be improved over 13 dB by optimizing the MQW etalon structure, indicating potential applicability to ultrafast optical communication systems. The optimization would improve the transmission from a present value of about 1%
Keywords :
carrier lifetime; high-speed optical techniques; light interferometers; optical communication equipment; optical pumping; optical switches; optimisation; semiconductor quantum wells; 4 ps; MQW etalon structure; all-optical switching; carrier lifetime; carrier spin relaxation; decay time; optimization; picosecond spin-polarization relaxation; polarization change; polarization rotation angle; probe beam; pulse width; pump pulse energy; quantum-well etalon; total well thickness; ultrafast all-optical spin polarization switch; ultrafast all-optical switch; ultrafast optical communication systems; Absorption; Communication switching; Laboratories; Optical interferometry; Optical wavelength conversion; Polarization; Quantum well devices; Quantum wells; Switches; Temperature;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.571766
Filename :
571766
Link To Document :
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