Title :
Microscopic mechanisms of radiation-induced proton density decay in SiO2 films
Author :
Karna, S.P. ; Pugh, R.D. ; Chavez, J.R. ; Shedd, W. ; Brothers, C.P. ; Singaraju, B.K. ; Vitiello, M. ; Pacchioni, G. ; Devine, R.A.B.
Author_Institution :
Res. Lab., Kirtland AFB, NM, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
In order to understand the physics of radiation-induced proton density decay in thin SiO2 films, we performed ab initio Hartree-Fock calculations of the potential energy curves for the interaction between model oxide clusters and H in two charge states. The calculated results led to two separate proposed mechanisms for proton density decay in thin SiO2 films: (1) electronic excitation involving hot phonon levels of the ground electronic state at low photon-energy radiation and (2) electron capture by protons at high photon-energy radiation. The proposed mechanisms qualitatively explain recent experimental observations
Keywords :
HF calculations; X-ray effects; ab initio calculations; electron-phonon interactions; ground states; impurity states; insulating thin films; potential energy surfaces; silicon compounds; ultraviolet radiation effects; H charge states; SiO2; SiO2:H; ab initio Hartree-Fock calculations; electronic excitation; ground electronic state; high photon-energy radiation; hot phonon levels; low photon-energy radiation; microscopic mechanisms; model oxide clusters; potential energy curves; proton-electron capture; radiation-induced proton density decay; thin films; Amorphous materials; Annealing; Land surface temperature; Microscopy; Nonvolatile memory; Phonons; Physics; Potential energy; Protons; Radioactive decay;
Journal_Title :
Nuclear Science, IEEE Transactions on
