Total dose radiation hard 0.35 μm SOI CMOS technology

Author

Liu, S.T. ; Jenkins, W.C. ; Hughes, H.L.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2442

Lastpage

2449

Abstract

This paper presents the total dose radiation performance of 0.35 μm SOI CMOS devices fabricated in a radiation hard full dose SIMOX technology. The radiation performance is characterized by transistor threshold voltage shifts, transistor array leakage currents, and 256 K SRAM standby currents as a function of total dose up to 10 Mrad(SiO₂). The worst case threshold voltage shifts of front channels are less than 60 mV for PMOS transistors at 1 Mrad(SiO₂) and less than 10 mV for NMOS transistors. No significant radiation induced leakage currents are observed in small transistor arrays to 10 Mrad(SiO₂). Standby currents of 256 K SRAMs are less than the 1.5 mA specification over the total dose range of 1 Mrad(SiO₂). The results suggest high density SRAMs and ASIC fabricated in this technology will perform well in harsh radiation environment

Keywords

CMOS integrated circuits; SIMOX; SRAM chips; application specific integrated circuits; leakage currents; radiation hardening (electronics); 0.35 micron; 10 Mrad; 256 Kbit; ASIC; NMOS transistor; PMOS transistor; SIMOX technology; SOI CMOS device; SRAM; leakage current; standby current; threshold voltage; total dose radiation hardness; transistor array; Application specific integrated circuits; CMOS technology; Isolation technology; Leakage current; MOSFETs; Radiation hardening; Random access memory; Silicon on insulator technology; Space technology; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736484

Filename

736484