Improved millimeter-wave mixer performance analysis at cryogenic temperatures

Author

Siegel, Peter H. ; Mehdi, Imran ; East, Jack

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

1

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

129

Lastpage

131

Abstract

The results of a 600-GHz mixer performance analysis using an improved model for computing the Schottky diode capacitance-voltage (C-V) relationship are presented. The computed C-V data for a realistic submillimeter-wave mixer diode are given as a function of physical temperature and compared to the standard analytic expression based on a solution of Poisson´s equation. Both C-V relationships are used to predict the performance of an ideally terminated 600 GHz mixer operating at 300, 140, 80, and 30 K. It is shown that the drift-diffusion model more accurately describes the mixer performance when the physical temperature is reduced below approximately=100 K.<>

Keywords

Schottky-barrier diodes; cryogenics; mixers (circuits); semiconductor device models; solid-state microwave circuits; 30 to 300 K; 600 GHz; C-V relationships; Schottky diode; capacitance model; cryogenic temperatures; drift-diffusion model; ideally terminated; millimeter-wave mixer; performance analysis; physical temperature; submillimeter-wave mixer diode; Capacitance; Capacitance-voltage characteristics; Cryogenics; Millimeter wave technology; Performance analysis; Schottky diodes; Space technology; Submillimeter wave technology; Temperature; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.91088

Filename

91088