Title :
Single-event burnout of epitaxial bipolar transistors
Author :
Kuboyama, S. ; Sugimoto, K. ; Shugyo, S. ; Matsuda, S. ; Hirao, T.
Author_Institution :
Nat. Space Dev. Agency of Japan, Tsukuba, Japan
fDate :
12/1/1998 12:00:00 AM
Abstract :
Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified
Keywords :
bipolar transistors; radiation effects; semiconductor device breakdown; semiconductor device measurement; semiconductor epitaxial layers; EPICS spectra; NPN BJTs; SEB phenomenon; bipolar junction transistors; destructive mode; epitaxial bipolar transistors; n-p-n BJT; nondestructive mode; single-event burnout; small signal transistors; Atomic layer deposition; Bipolar transistors; Capacitors; Circuit testing; Cyclotrons; Epitaxial layers; Gold; Ion beams; MOSFETs; Scattering;
Journal_Title :
Nuclear Science, IEEE Transactions on
