Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

Author

Schöne, H. ; Walsh, D.S. ; Sexton, F.W. ; Doyle, B.L. ; Dodd, P.E. ; Aurand, J.F. ; Flores, R.S. ; Wing, N.

Author_Institution

Air Force Res. Lab./VSSE, Albuquerque, NM, USA

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2544

Lastpage

2549

Abstract

The entire current transient induced by single 12-MeV Carbon ions was measured at a 5 GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. The simulations match the drift charge collection measurements within experimental errors. Estimates are presented for the drift assisted funneling charge collection depth

Keywords

CMOS integrated circuits; ion beam effects; 12 MeV; 3D DAVINCI simulation; 5 GHz; C; CMOS transistor; TRIBICC; current transient; diffusive charge collection; drift charge collection; focused ion microbeam; microelectronics; time resolved ion beam induced charge collection; Bandwidth; Charge measurement; Current measurement; Ion beams; Laboratories; Particle measurements; Power system transients; Shape measurement; Testing; Transmission line measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736496

Filename

736496