Title :
Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
Author :
Schöne, H. ; Walsh, D.S. ; Sexton, F.W. ; Doyle, B.L. ; Dodd, P.E. ; Aurand, J.F. ; Flores, R.S. ; Wing, N.
Author_Institution :
Air Force Res. Lab./VSSE, Albuquerque, NM, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
The entire current transient induced by single 12-MeV Carbon ions was measured at a 5 GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. The simulations match the drift charge collection measurements within experimental errors. Estimates are presented for the drift assisted funneling charge collection depth
Keywords :
CMOS integrated circuits; ion beam effects; 12 MeV; 3D DAVINCI simulation; 5 GHz; C; CMOS transistor; TRIBICC; current transient; diffusive charge collection; drift charge collection; focused ion microbeam; microelectronics; time resolved ion beam induced charge collection; Bandwidth; Charge measurement; Current measurement; Ion beams; Laboratories; Particle measurements; Power system transients; Shape measurement; Testing; Transmission line measurements;
Journal_Title :
Nuclear Science, IEEE Transactions on
