Title :
TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
Author :
Milanowski, R.J. ; Pagey, M.P. ; Massengill, L.W. ; Schrimpf, R.D. ; Wood, M.E. ; Offord, B.W. ; Graves, R.J. ; Galloway, K.F. ; Nicklaw, C.J. ; Kelley, E.P.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as enhanced hole trapping in the buried oxide near the island edge. Simulation results suggest this edge effect may be mitigated using body-tied-to-source tabs at the edge of the island. The potential performance and manufacturing impacts of this measure are discussed
Keywords :
MOSFET; buried layers; electronic engineering computing; hole traps; leakage currents; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; technology CAD (electronics); NMOSFET; Si; TCAD-assisted analysis; back-channel leakage; body-tied-to-source tabs; buried oxide; edge effect; hole trapping simulation; integrated process/device simulation; irradiated mesa SOI n-MOSFETs; leakage enhancement; n-channel MOSFET; Data systems; Etching; Geometry; Isolation technology; Leakage current; MOSFETs; Manufacturing; Semiconductor device manufacture; Silicon; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
