Title :
Proton damage effects in linear integrated circuits
Author :
Rax, B.G. ; Johnston, A.H. ; Lee, C.I.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Proton tests of linear integrated circuits have identified devices where significantly more damage occurs at equivalent total dose levels with protons than with gamma rays. The difference is attributed to displacement damage, and it can be important for hardened devices as well as for unhardened technologies. Proton testing may be required for applications of circuits that use substrate and lateral pnp transistors in critical circuit functions where protons comprise a significant fraction of the space environment
Keywords :
analogue integrated circuits; integrated circuit testing; proton effects; radiation hardening (electronics); displacement damage; lateral p-n-p transistors; linear integrated circuits; proton damage effects; proton tests; space environment; substrate PNP transistors; Analog integrated circuits; Circuit synthesis; Circuit testing; Gamma rays; Integrated circuit technology; Ionization; Protons; Space technology; Substrates; Yield estimation;
Journal_Title :
Nuclear Science, IEEE Transactions on
