DocumentCode
1455417
Title
Proton damage effects in linear integrated circuits
Author
Rax, B.G. ; Johnston, A.H. ; Lee, C.I.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
45
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
2632
Lastpage
2637
Abstract
Proton tests of linear integrated circuits have identified devices where significantly more damage occurs at equivalent total dose levels with protons than with gamma rays. The difference is attributed to displacement damage, and it can be important for hardened devices as well as for unhardened technologies. Proton testing may be required for applications of circuits that use substrate and lateral pnp transistors in critical circuit functions where protons comprise a significant fraction of the space environment
Keywords
analogue integrated circuits; integrated circuit testing; proton effects; radiation hardening (electronics); displacement damage; lateral p-n-p transistors; linear integrated circuits; proton damage effects; proton tests; space environment; substrate PNP transistors; Analog integrated circuits; Circuit synthesis; Circuit testing; Gamma rays; Integrated circuit technology; Ionization; Protons; Space technology; Substrates; Yield estimation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.736507
Filename
736507
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