Title :
Study of low-dose-rate radiation effects on commercial linear bipolar ICs
Author :
Freitag, R.K. ; Brown, D.B.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
The results of a detailed study of the degradation of commercial linear bipolar ICs due to irradiation at four dose rates are presented. The time dependence of the degradation rate at the different dose rates is shown to be consistent with a model that describes a mechanism for defect generation in the devices used in this study. Based on this model, an accelerated test procedure for bipolar devices is proposed
Keywords :
bipolar analogue integrated circuits; integrated circuit modelling; integrated circuit testing; life testing; radiation effects; radiation hardening (electronics); accelerated test procedure; commercial linear bipolar ICs; defect generation mechanism; degradation rate; irradiation; low-dose-rate radiation effects; model; time dependence; Bipolar transistors; Circuits; Degradation; Ionizing radiation; Laboratories; Life estimation; MOS devices; Radiation effects; Simulated annealing; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
