Title :
A way to improve dose rate laser simulation adequacy [Si ICs]
Author :
Skorobogatov, P.K. ; Nikiforov, A.Y. ; Demidov, A.A.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fDate :
12/1/1998 12:00:00 AM
Abstract :
A method for improving laser simulation of dose rate radiation in silicon ICs is analyzed based on the application of noncoherent laser radiation. Experimental validation was performed using test structures with up to 90% surface metallization coverage
Keywords :
elemental semiconductors; integrated circuit testing; laser beam applications; laser beam effects; monolithic integrated circuits; radiation effects; silicon; simulation; Si; Si devices; dose rate laser simulation; noncoherent laser radiation; silicon ICs; surface metallization coverage; test structures; Absorption; Circuit simulation; Circuit testing; Ionization; Metallization; P-n junctions; Semiconductor lasers; Shadow mapping; Strips; X-ray lasers;
Journal_Title :
Nuclear Science, IEEE Transactions on
