DocumentCode
1455450
Title
A way to improve dose rate laser simulation adequacy [Si ICs]
Author
Skorobogatov, P.K. ; Nikiforov, A.Y. ; Demidov, A.A.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
Volume
45
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
2659
Lastpage
2664
Abstract
A method for improving laser simulation of dose rate radiation in silicon ICs is analyzed based on the application of noncoherent laser radiation. Experimental validation was performed using test structures with up to 90% surface metallization coverage
Keywords
elemental semiconductors; integrated circuit testing; laser beam applications; laser beam effects; monolithic integrated circuits; radiation effects; silicon; simulation; Si; Si devices; dose rate laser simulation; noncoherent laser radiation; silicon ICs; surface metallization coverage; test structures; Absorption; Circuit simulation; Circuit testing; Ionization; Metallization; P-n junctions; Semiconductor lasers; Shadow mapping; Strips; X-ray lasers;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.736511
Filename
736511
Link To Document