Title :
Silicon High-Order Coupled-Microring-Based Electro-Optical Switches for On-Chip Optical Interconnects
Author :
Luo, Xianshu ; Song, Junfeng ; Feng, Shaoqi ; Poon, Andrew W. ; Liow, Tsung-Yang ; Yu, Mingbin ; Lo, Guo-Qiang ; Kwong, Dim-Lee
Author_Institution :
Inst. of Microelectron., Agency for Sci., Singapore, Singapore
fDate :
5/15/2012 12:00:00 AM
Abstract :
We demonstrate an electro-optically (EO) tunable switch using tenth-order coupled-microring resonators in silicon-on-insulator using complementary metal-oxide-semiconductor fabrication technology. The measured drop-port transmission spectra show box-like transmission passband with ~100-GHz bandwidth and ~50-dB extinction ratio. With a DC voltage supply to the integrated p-i-n diodes surrounding the microrings, the optical switch shows, respectively, ~10 and ~45-dB on/off ratios from throughputand drop-port. The measured EO switching times are ~1 ns upon a 1.2-Vpp low-speed driving signal and a DC power consumption of ~37 mW. Up to 30-Gb/s pseudorandom binary sequence (231-1) signal transmissions suggest high-data-rate signal switching capability.
Keywords :
CMOS image sensors; electro-optical switches; integrated optoelectronics; micro-optics; optical interconnections; p-i-n diodes; silicon-on-insulator; DC voltage; Si; bandwidth 100 GHz; bit rate 30 Gbit/s; complementary metal-oxide-semiconductor fabrication technology; drop-port transmission spectra; extinction ratio; high-data-rate signal switching capability; high-order coupled microring based electro-optical switches; integrated p-i-n diodes; on-chip optical interconnects; power 37 mW; pseudorandom binary sequence; silicon-on-insulator; Couplings; Electrooptical waveguides; Optical switches; Silicon; System-on-a-chip; Throughput; Coupled resonators; electrooptic devices; integrated optoelectronics; ring resonator; silicon-on-insulator technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2188829
