Proton induced damage in SiC light emitting diodes

Author

Hinrichse, P.F. ; Houdayer, A.J. ; Barry, A.L. ; Vincent, J.

Author_Institution

Dept. de Phys., Montreal Univ., Que., Canada

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2808

Lastpage

2812

Abstract

The possible use of SiC LEDs (light emitting diodes) as NIEL (Non Ionizing Energy Loss) monitors for space and other applications has been investigated. The effects of proton irradiation on both the response time and the intensity of the light emitted by “blue” SiC LEDs have been measured for proton energies between 2.0 and 500 MeV. Variation of the damage constants K_τ(E_p), defined in terms of the response time decrement, and K_L(E_p), defined in terms of the decrease in light output, are compared with calculations of NIEL and the Relativistic Elastic scattering cross section

Keywords

energy loss of particles; light emitting diodes; proton effects; semiconductor materials; silicon compounds; 2.0 to 500 MeV; SiC; SiC light emitting diode; blue LED; damage constant; light intensity; nonionizing energy loss monitor; proton irradiation; relativistic elastic scattering cross section; response time; space NIEL monitor; Delay; Energy loss; Frequency measurement; Gallium arsenide; Ionizing radiation; Light emitting diodes; Manufacturing; Protons; Silicon carbide; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736532

Filename

736532