مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1455626

Title :

Carrier removal in p-type InP

Author :

Messenger, S.R. ; Walters, R.J. ; Xapsos, M.A. ; Summers, G.P. ; Burke, E.A.

Author_Institution :

SFA Inc., Largo, MD, USA

Volume :

Issue :

fYear :

1998

fDate :

12/1/1998 12:00:00 AM

Firstpage :

2857

Lastpage :

2860

Abstract :

Electron and proton carrier removal rates due to 1 MeV electrons, 3 and 10 MeV protons, and 2 MeV alpha particles in p-type InP are found to be linearly proportional to nonionizing energy loss and independent of the initial carrier concentration over the range from 10¹⁶ to 4×10¹⁷ cm^-3

Keywords :

III-V semiconductors; alpha-particle effects; carrier density; electron beam effects; indium compounds; minority carriers; proton effects; 1 MeV; 10 MeV; 2 MeV; InP; alpha particles; electron carrier removal rates; electron effects; initial carrier concentration; minority carrier devices; nonionizing energy loss; proton carrier removal rates; proton effects; Degradation; Electrons; Energy measurement; Extrapolation; Indium phosphide; Laboratories; Photovoltaic cells; Protons; Semiconductor materials; Testing;

fLanguage :

English

Journal_Title :

Nuclear Science, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9499

Type :

jour

DOI :

10.1109/23.736539

Filename :

736539

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1455626