Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs

Author

Ohyama, H. ; Simoen, E. ; Kuroda, S. ; Claeys, C. ; Takami, Y. ; Hakata, T. ; Sunaga, H.

Author_Institution

Kumamoto Nat. Coll. of Technol., Japan

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2861

Lastpage

2866

Abstract

Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20 MeV alpha ray and 220 MeV carbon, are studied for the first time. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The degradation of device performance increases with increasing fluence. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas (2DEG) region. The influence of the radiation source on the degradation and recovery is discussed by comparison with 1 MeV electron and 1 MeV fast neutron exposures with respect to the number of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300°C shows that the device performance degraded by the irradiation recovers completely

Keywords

III-V semiconductors; alpha-particle effects; annealing; carrier mobility; electron beam effects; electron density; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; neutron effects; two-dimensional electron gas; 2D electron gas region; 2DEG region; 75 to 300 C; InGaP-InGaAs; PHEMTs; alpha ray; channel electrons scattering; device performance degradation; drain current; effective mobility; electron density; high energy particles; induced lattice defects; irradiation damage; isochronal thermal annealing; nonionizing energy loss; pseudomorphic HEMTs; radiation source influence; recovery behavior; threshold voltage; Annealing; Atomic measurements; Electron mobility; Indium gallium arsenide; Lattices; Neutrons; PHEMTs; Particle scattering; Thermal degradation; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736540

Filename

736540