Fabrication of precision quantized Hall devices

Author

Inglis, A. Dave ; Minowa, Isao

Author_Institution

Nat. Meas. Stand., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

46

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

281

Lastpage

284

Abstract

We have fabricated metrological-quality quantized Hall devices. The devices are GaAs/AlGaAs heterostructures photolithographically etched from wafers grown by molecular beam epitaxy (MBE), with evaporated AuGeNi contacts. Step 2 centers are at 7.6 and 9.7 tesla, and currents of more than 100 μA can be carried on steps 2 and 4. The contacting has been optimized to give contact resistances of 2-3 mΩ

Keywords

III-V semiconductors; aluminium compounds; electric resistance measurement; etching; gallium arsenide; germanium alloys; gold alloys; measurement standards; molecular beam epitaxial growth; nickel alloys; p-n heterojunctions; photolithography; quantum Hall effect; resistors; semiconductor technology; 100 muA; 2 to 3 mohm; AuGeNi; AuGeNi contacts; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; MBE; metrological-quality; molecular beam epitaxy; photolithographically etched structures; precision quantized Hall devices; Contact resistance; Current measurement; Electrical resistance measurement; Etching; Fabrication; Gallium arsenide; Magnetic field measurement; Molecular beam epitaxial growth; Noise measurement; Resistors;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.571832

Filename

571832