Title :
A simple approach to SEU cross section evaluation [semiconductor memories]
Author :
Miroshkin, V.V. ; Tverskoy, M.G.
Author_Institution :
St. Petersburg Nucl. Phys. Inst., Gatchina, Russia
fDate :
12/1/1998 12:00:00 AM
Abstract :
The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown
Keywords :
integrated memory circuits; proton effects; DRAM; SEU cross section evaluation; SEU cross section measurement; SEU rate prediction; SRAM; proton induced SEU; semiconductor memories; single event upset; Data analysis; Energy measurement; Neutrons; Nuclear measurements; Nuclear physics; Parameter estimation; Predictive models; Projectiles; Protons; Semiconductor memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
