DocumentCode
1455651
Title
A simple approach to SEU cross section evaluation [semiconductor memories]
Author
Miroshkin, V.V. ; Tverskoy, M.G.
Author_Institution
St. Petersburg Nucl. Phys. Inst., Gatchina, Russia
Volume
45
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
2884
Lastpage
2890
Abstract
The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown
Keywords
integrated memory circuits; proton effects; DRAM; SEU cross section evaluation; SEU cross section measurement; SEU rate prediction; SRAM; proton induced SEU; semiconductor memories; single event upset; Data analysis; Energy measurement; Neutrons; Nuclear measurements; Nuclear physics; Parameter estimation; Predictive models; Projectiles; Protons; Semiconductor memory;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.736543
Filename
736543
Link To Document