Title :
Influence of infrared illumination on the accuracy of the quantized Hall resistance
Author :
Jeanneret, Blaise ; Jeckelmann, Beat ; Bühlmann, Hans-jörg ; Begems, M.
Author_Institution :
Swiss Federal Office of Metrol., Wabern, Switzerland
fDate :
4/1/1997 12:00:00 AM
Abstract :
The influence of infrared radiation on the accuracy of the quantized Hall resistance devices used in metrology is investigated. Samples exhibiting anomalous quantized Hall resistances due to large contact resistances resulting from a partially depleted electron gas can be brought back to a normal behavior by illumination with short pulses of infrared light. In addition, the critical current in the QHE regime can be considerably increased by the same illumination method
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; contact resistance; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; radiation effects; semiconductor heterojunctions; two-dimensional electron gas; 900 nm; AlGaAs-GaAs; AlGaAs/GaAs heterostructures; QHE regime; anomalous quantized Hall resistances; contact resistances; critical current; depleted electron gas; illumination; infrared illumination; infrared light; infrared radiation; metrology; precision measurement; pulses; quantized Hall resistance; Charge carrier density; Contact resistance; Critical current; Current measurement; Electrical resistance measurement; Electrons; Lighting; Metrology; Temperature; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
