Title :
Neutron induced soft errors in CMOS memories under reduced bias
Author :
Hazucha, Peter ; Johansson, Karin ; Svensson, Christer
Author_Institution :
Electron. Devices Group, Linkoping Univ., Sweden
fDate :
12/1/1998 12:00:00 AM
Abstract :
A custom designed 16 kbit CMOS memory was irradiated by 14 MeV neutrons and 100 MeV neutrons. SEU cross sections were evaluated under different supply voltages. The cross section values are compared to those predicted by the BGR model
Keywords :
CMOS memory circuits; errors; neutron effects; 100 MeV; 14 MeV; 16 kbit; BGR model; CMOS memory; SEU cross section; neutron irradiation; soft error; Alpha particles; Atomic measurements; Error analysis; Manufacturing processes; Neutrons; Packaging; Performance evaluation; Random access memory; Raw materials; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
