InGaN Light-Emitting Diodes With the Inverted Cone-Shaped Pillar Structures

Author

Lin, Chia-Feng ; Lin, Chun-Min ; Chen, Kuei-Ting ; Dai, Jing-Jie ; Lin, Ming-Shiou

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

458

Lastpage

460

Abstract

An InGaN-based light-emitting diode (LED) with an inverted cone-shaped pillar structure was fabricated through a plasma dry etching process and a photoelectrochemical (PEC) process. The undercut structure was fabricated through a bandgap-selective PEC etching process that occurred at the InGaN active layer. Then, the inverted cone-shaped pillar structure was formed through a bottom-up crystallographic etching process in a hot potassium hydroxide solution. The light-output power of the LED with an inverted cone-shaped pillar structure had a 42% enhancement compared with the standard LED without the pillar structure at a 20-mA operating current. A higher light intensity of the PEC-treated LED was observed around the mesa-edge region and the pillar structures as a result of a higher light-scattering process occurring at the inverted cone-shaped structure.

Keywords

III-V semiconductors; indium compounds; light emitting diodes; sputter etching; wide band gap semiconductors; InGaN; bandgap selective PEC etching process; bottom up crystallographic etching; inverted cone shaped pillar structure; light emitting diode; photoelectrochemical process; plasma dry etching process; undercut structure; Light-emitting diode (LED); optical-device fabrication; oxidation; semiconductor device measurements;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2044362

Filename

5439697