Title :
Driving Device Comparison for Phase-Change Memory
Author :
Li, Lin ; Lu, Kailiang ; Rajendran, Bipin ; Happ, Thomas D. ; Lung, Hsiang-Lan ; Lam, Chung ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
3/1/2011 12:00:00 AM
Abstract :
A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance parameters including cell size, current drive, disturb immunity, power dissipation, and scalability are carefully compared. While p-n diodes show superiority in technology nodes with large device dimensions, the scaling process has improved the performance of GAA MOSFETs significantly to outperform that of p-n diodes in extremely scaled technologies.
Keywords :
MOSFET; integrated circuit reliability; numerical analysis; phase change memories; semiconductor diodes; 3D numerical device simulation; GAA MOSFET; driving device; metal-oxide-semiconductor field-effect transistors; p-n diodes; phase-change memory cell; power dissipation; vertical gate-all-around; Arrays; Logic gates; MOSFETs; Phase change materials; Power demand; Programming; Resistance; Diode; gate-all-around MOSFET (GAA MOSFET); ovonic unified memory (OUM); phase change memory (PCM); phase change random access memory (PRAM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2100082
