DocumentCode :
1456420
Title :
A comprehensive delay macro modeling for submicrometer CMOS logics
Author :
Daga, Jean Michel ; Auvergne, Daniel
Author_Institution :
ATMEL, Rousset, France
Volume :
34
Issue :
1
fYear :
1999
fDate :
1/1/1999 12:00:00 AM
Firstpage :
42
Lastpage :
55
Abstract :
The increasing need for high-performance, cost-effective, application-specific integrated circuits, associated to the reduction of design cycle time, compels designers to manage and optimize the circuit speed performance at each step of the design flow. Circuits are usually designed at gate level; the gate selection or sizing and their placement are driven by estimated delay, hence the need for accurate estimations at the logical level. In the submicrometer range, the gap between gate-level logical estimations and transistor-level electrical simulations dramatically increases. We propose here a comprehensive analytical modeling of the speed performance of CMOS gates with an accuracy comparable to electrical simulators. A design-oriented expression of delay is first developed for CMOS inverters, considering input slope, input-to-output capacitance coupling, and short-circuit current effects. The extension to more complex gates is proposed using a serial array reduction technique taking account of the gate input dependency and the input-slope-induced nonlinearity. Validations are obtained over a large range of design, load, and input slope conditions by comparison with SPICE simulations (level 6 with 0.65-μm foundry specified card model) used as a reference
Keywords :
CMOS logic circuits; delays; integrated circuit modelling; logic gates; application specific integrated circuit; delay macro model; design; input slope; input-to-output capacitance coupling; inverter; serial array; short circuit current; speed optimization; submicrometer CMOS logic gate; Analytical models; Application specific integrated circuits; CMOS logic circuits; Circuit simulation; Delay effects; Delay estimation; Design optimization; Inverters; Performance analysis; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.736655
Filename :
736655
Link To Document :
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