DocumentCode :
1456435
Title :
Microwatt Embedded Processor Platform for Medical System-on-Chip Applications
Author :
Sridhara, Srinivasa R. ; DiRenzo, Michael ; Lingam, Srinivas ; Lee, Seok-Jun ; Blázquez, Raul ; Maxey, Jay ; Ghanem, Samer ; Lee, Yu-Hung ; Abdallah, Rami ; Singh, Prashant ; Goel, Manish
Author_Institution :
Texas Instrum., Dallas, TX, USA
Volume :
46
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
721
Lastpage :
730
Abstract :
Battery life specifications drive the power consumption requirements of integrated circuits in implantable, wearable, and portable medical devices. In this paper, we present an embedded processor platform chip using an ARM Cortex-M3 suitable for mapping medical applications requiring microwatt power consumption. Ultra-low-power operation is achieved via 0.5-1.0 V operation, a 28 fW/bit fully differential subthreshold 6T SRAM, a 90%-efficient DC-DC converter, and a 100-nJ fast Fourier transform (FFT) accelerator to reduce processor workload. Using a combination of novel circuit design, system architecture, and SoC implementation, the first sub-microwatt per channel electroencephalograph (EEG) seizure detection is demonstrated.
Keywords :
DC-DC power convertors; SRAM chips; biomedical electronics; electroencephalography; embedded systems; fast Fourier transforms; integrated circuit design; low-power electronics; microcontrollers; seizure; system-on-chip; ARM Cortex-M3; DC-DC converter; EEG; FFT accelerator; SoC; battery life specification; differential subthreshold 6T SRAM; fast Fourier transform accelerator; implantable medical device; integrated circuit design; integrated circuit power consumption; medical system-on-chip application; microwatt embedded processor platform chip; portable medical device; sub-microwatt per channel electroencephalograph seizure detection; ultra-low-power operation; wearable medical device; Computer architecture; Converters; Frequency control; Rails; Random access memory; System-on-a-chip; Threshold voltage; DC-DC converter; EEG; FFT; SRAM; seizure detection; ultra-low power;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2108910
Filename :
5719133
Link To Document :
بازگشت