DocumentCode :
1456482
Title :
Improving Memory Reliability Against Soft Errors Using Block Parity
Author :
Reviriego, P. ; Argyrides, C. ; Maestro, J.A. ; Pradhan, D.K.
Author_Institution :
Univ. Antonio de Nebrija, Madrid, Spain
Volume :
58
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
981
Lastpage :
986
Abstract :
Memory reliability is an important issue. The continuous scaling of transistor technology enables the use of larger memories making soft errors more likely to occur. To ensure that those errors do not cause data corruption, error correcting codes (ECC) are commonly used. Single error correction-double error detection codes (SEC-DED) are typically implemented in each memory word, so that a single error in a word can be corrected and two errors can be detected. In this paper, a technique to improve the reliability of memories that use SEC-DED is studied. The proposed technique shows that it is possible to substantially improve the mean time to failure (MTTF) of the memory at the cost of increasing the access time for writing operations.
Keywords :
error correction codes; reliability; block parity; error correcting codes; memory reliability; memory word; single error correction-double error detection codes; soft errors; writing operations; Approximation methods; Complexity theory; Error correction codes; Integrated circuit reliability; Memory management; Writing; Error correcting codes; MTTF; reliability;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2109965
Filename :
5719141
Link To Document :
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