• DocumentCode
    1456482
  • Title

    Improving Memory Reliability Against Soft Errors Using Block Parity

  • Author

    Reviriego, P. ; Argyrides, C. ; Maestro, J.A. ; Pradhan, D.K.

  • Author_Institution
    Univ. Antonio de Nebrija, Madrid, Spain
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    981
  • Lastpage
    986
  • Abstract
    Memory reliability is an important issue. The continuous scaling of transistor technology enables the use of larger memories making soft errors more likely to occur. To ensure that those errors do not cause data corruption, error correcting codes (ECC) are commonly used. Single error correction-double error detection codes (SEC-DED) are typically implemented in each memory word, so that a single error in a word can be corrected and two errors can be detected. In this paper, a technique to improve the reliability of memories that use SEC-DED is studied. The proposed technique shows that it is possible to substantially improve the mean time to failure (MTTF) of the memory at the cost of increasing the access time for writing operations.
  • Keywords
    error correction codes; reliability; block parity; error correcting codes; memory reliability; memory word; single error correction-double error detection codes; soft errors; writing operations; Approximation methods; Complexity theory; Error correction codes; Integrated circuit reliability; Memory management; Writing; Error correcting codes; MTTF; reliability;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2109965
  • Filename
    5719141