DocumentCode
1456482
Title
Improving Memory Reliability Against Soft Errors Using Block Parity
Author
Reviriego, P. ; Argyrides, C. ; Maestro, J.A. ; Pradhan, D.K.
Author_Institution
Univ. Antonio de Nebrija, Madrid, Spain
Volume
58
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
981
Lastpage
986
Abstract
Memory reliability is an important issue. The continuous scaling of transistor technology enables the use of larger memories making soft errors more likely to occur. To ensure that those errors do not cause data corruption, error correcting codes (ECC) are commonly used. Single error correction-double error detection codes (SEC-DED) are typically implemented in each memory word, so that a single error in a word can be corrected and two errors can be detected. In this paper, a technique to improve the reliability of memories that use SEC-DED is studied. The proposed technique shows that it is possible to substantially improve the mean time to failure (MTTF) of the memory at the cost of increasing the access time for writing operations.
Keywords
error correction codes; reliability; block parity; error correcting codes; memory reliability; memory word; single error correction-double error detection codes; soft errors; writing operations; Approximation methods; Complexity theory; Error correction codes; Integrated circuit reliability; Memory management; Writing; Error correcting codes; MTTF; reliability;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2109965
Filename
5719141
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