Title :
High-Frequency Thermally Actuated Electromechanical Resonators With Piezoresistive Readout
Author :
Rahafrooz, Amir ; Pourkamali, Siavash
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
This paper presents fabrication, characterization, and modeling of micro/nanoelectromechanical high-frequency resonators actuated using thermal forces with piezoresistive readout. Thermally actuated single-crystalline silicon resonators with frequencies (up to 61 MHz) have been successfully demonstrated. It is shown both theoretically and experimentally that, as opposed to the general perception, thermal actuation can be a viable actuation mechanism for high-frequency resonators, and using appropriate design guidelines, this actuation mechanism could even be more suitable for higher frequency rather than lower frequency applications. It has been shown through comprehensive thermoelectro-mechanical modeling that thermal-piezoresistive nanomechanical resonators with frequencies in the gigahertz range can exhibit motional conductance values as high as 1 mA/V while consuming static power as low as a few microwatts.
Keywords :
electromechanical actuators; elemental semiconductors; high-frequency effects; micromechanical resonators; nanoelectromechanical devices; piezoresistive devices; readout electronics; silicon; MEMS resonator; NEMS resonator; Si; high-frequency thermally actuated electromechanical resonator; microelectromechanical high-frequency resonator; piezoresistive readout; thermal force; thermal-piezoresistive nanomechanical resonator; thermally actuated single-crystalline silicon resonator; thermoelectromechanical modeling; Actuators; Force; Piezoresistance; Resonant frequency; Thermal conductivity; Thermal resistance; Electromechanical modeling; high frequency; microelectromechanical system (MEMS) resonator; nanoelectromechanical system (NEMS) resonator; piezoresistive readout; thermal actuation; thermal modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2105491