Title :
Dominance of interface effects in SRO-SiO2-SRO DEIS structures for EAROMs
Author :
Chang, Kuo-Tung ; Rose, Kenneth
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
10/1/1988 12:00:00 AM
Abstract :
Current injection at silicon-rich oxide (SRO)-thermal oxide and SRO-CVD (chemical-vapor-deposited) oxide interfaces is shown to be interface-limited. I-V characteristics for both interfaces fit a model for injection enhancement that depends on the curvature of Si islands in the SRO. Results indicate that only a fraction of the Si islands contribute to the injection. The asymmetry observed in dual-electron-injector structures (DEIS) can be explained by a 2.5-times difference in the number of islands between top and bottom injecting interfaces
Keywords :
integrated memory circuits; read-only storage; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; I-V characteristics; Si rich oxide; Si-SiO2-Si; asymmetry; chemical-vapor-deposited; curvature; dual-electron-injector structures; injecting interfaces; injection enhancement; interface effects; interface-limited; islands; thermal oxide; EPROM; Electrodes; Electrons; Fabrication; Gases; Nonvolatile memory; Oxidation; Semiconductor films; Silicon; Surface morphology;
Journal_Title :
Electron Devices, IEEE Transactions on
