• DocumentCode
    1456720
  • Title

    Dominance of interface effects in SRO-SiO2-SRO DEIS structures for EAROMs

  • Author

    Chang, Kuo-Tung ; Rose, Kenneth

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    35
  • Issue
    10
  • fYear
    1988
  • fDate
    10/1/1988 12:00:00 AM
  • Firstpage
    1645
  • Lastpage
    1650
  • Abstract
    Current injection at silicon-rich oxide (SRO)-thermal oxide and SRO-CVD (chemical-vapor-deposited) oxide interfaces is shown to be interface-limited. I-V characteristics for both interfaces fit a model for injection enhancement that depends on the curvature of Si islands in the SRO. Results indicate that only a fraction of the Si islands contribute to the injection. The asymmetry observed in dual-electron-injector structures (DEIS) can be explained by a 2.5-times difference in the number of islands between top and bottom injecting interfaces
  • Keywords
    integrated memory circuits; read-only storage; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; I-V characteristics; Si rich oxide; Si-SiO2-Si; asymmetry; chemical-vapor-deposited; curvature; dual-electron-injector structures; injecting interfaces; injection enhancement; interface effects; interface-limited; islands; thermal oxide; EPROM; Electrodes; Electrons; Fabrication; Gases; Nonvolatile memory; Oxidation; Semiconductor films; Silicon; Surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.7367
  • Filename
    7367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1456720