Title :
MESFET simulation oriented toward computer-aided microwave circuit design
Author :
Sandborn, P.A. ; Blakey, P.A.
Author_Institution :
Microelectron. & Comput. Technol. Corp., Austin, TX
fDate :
4/1/1990 12:00:00 AM
Abstract :
A MESFET simulator designed to link physically based transistor simulation to microwave circuit simulation within an integrated CAD environment is described. The key features of the simulator are efficient implementation of a large-signal time-domain device simulation kernel; incorporation of extensive postprocessing of raw time-domain data; and an interactive, graphics-oriented user interface. An example that demonstrates the utility of the approach for assessing circuit models is presented
Keywords :
Schottky gate field effect transistors; circuit CAD; equivalent circuits; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; MESFET simulation; computer-aided microwave circuit design; integrated CAD environment; interactive graphics-oriented user interface; large-signal time-domain device simulation kernel; microwave circuit simulation; postprocessing; time-domain data; transistor simulation; Circuit simulation; Computational modeling; Computer simulation; Design automation; MESFET circuits; MESFET integrated circuits; Microwave circuits; Microwave devices; Microwave transistors; Time domain analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
