MESFET simulation oriented toward computer-aided microwave circuit design

Author

Sandborn, P.A. ; Blakey, P.A.

Author_Institution

Microelectron. & Comput. Technol. Corp., Austin, TX

Volume

38

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

426

Lastpage

429

Abstract

A MESFET simulator designed to link physically based transistor simulation to microwave circuit simulation within an integrated CAD environment is described. The key features of the simulator are efficient implementation of a large-signal time-domain device simulation kernel; incorporation of extensive postprocessing of raw time-domain data; and an interactive, graphics-oriented user interface. An example that demonstrates the utility of the approach for assessing circuit models is presented

Keywords

Schottky gate field effect transistors; circuit CAD; equivalent circuits; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; MESFET simulation; computer-aided microwave circuit design; integrated CAD environment; interactive graphics-oriented user interface; large-signal time-domain device simulation kernel; microwave circuit simulation; postprocessing; time-domain data; transistor simulation; Circuit simulation; Computational modeling; Computer simulation; Design automation; MESFET circuits; MESFET integrated circuits; Microwave circuits; Microwave devices; Microwave transistors; Time domain analysis;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.52584

Filename

52584