Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

Author

Agaiby, Rouzet M B ; Olsen, Sarah H. ; Eneman, Geert ; Simoen, Eddy ; Augendre, Emmanuel ; O´Neill, Anthony G.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

419

Lastpage

421

Abstract

Measuring strain in long-channel MOSFETs on silicon-on-insulator (SOI) and strained-SOI platforms is demonstrated using ultraviolet (UV) Raman spectroscopy. Removal of the Raman inactive strain-inducing metallization layers is avoided by etching trenches under transistors without mask alignment in order to expose the channel region. The technique is shown to be repeatable and does not alter the initial strain state in the channel. The applicability of this technique to short-channel transistors is also discussed.

Keywords

MOSFET; Raman spectroscopy; etching; silicon-on-insulator; strain measurement; ultraviolet spectroscopy; MOSFET channel strain; backside etching; channel region; long-channel MOSFET; long-channel device; short-channel transistor; silicon-on-insulator; strain measurement; strained-SOI platform; ultraviolet Raman spectroscopy; Bosch; MOSFETs; Raman spectroscopy; deep reactive-ion etching (DRIE); silicon on insulator (SOI); strain; strained SOI (SSOI); strained silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2043496

Filename

5439849